Effect of Rb and Cs-doping on superconducting properties of MgB2 thin films
R K Singh, Y Shen, R Gandikota, D Wright, C Carvalho, J M Rowell, N Newman
arXiv:0709.4001 · DOI 10.1088/0953-2048/21/2/025012 · 2007-09-25 · Superconductor Science and Technology
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Abstract
Our Rutherford backscattering spectrometry (RBS) study has found that concentrations up to 7 atomic percent of Rb and Cs can be introduced to a depth of ~700 A in MgB2 thin films by annealing in quartz ampoules containing elemental alkali metals at <350 degree centigrade. No significant change in transition temperature (Tc) was observed, in contrast to an earlier report of very high Tc (>50 K) for similar experiments on MgB2 powders. The lack of a significant change in Tc and intra-granular carrier scattering suggests that Rb and Cs diffuse into the film, but do not enter the grains. Instead, the observed changes in the electrical properties, including a significant drop in Jc and an increase in delta rho (rho300-rho40), arise from a decrease in inter-granular connectivity due to segregation of the heavy alkaline metals and other impurities (i.e. C and O) introduced into the grain boundary regions during the anneals.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
| MgB2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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