Electronic Structures of CaAlSi with Different Stacking AlSi Layers by First-Principles Calculations
S. Kuroiwa, A. Nakashima, S. Miyahara, N. Furukawa, J. Akimitsu
arXiv:0710.3437 · DOI 10.1143/JPSJ.76.113705 · 2007-10-18 · Journal of the Physical Society of Japan
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Abstract
The full-potential linear augmented plane-wave calculations have been applied to investigate the systematic change of electronic structures in CaAlSi due to different stacking sequences of AlSi layers. The present ab-initio calculations have revealed that the multistacking, buckling and 60 degrees rotation of AlSi layer affect the electronic band structure in this system. In particular, such a structural perturbation gives rise to the disconnected and cylindrical Fermi surface along the M-L lines of the hexagonal Brillouin zone. This means that multistacked CaAlSi with the buckling AlSi layers increases degree of two-dimensional electronic characters, and it gives us qualitative understanding for the quite different upper critical field anisotropy between specimens with and without superstructure as reported previously.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8 | Pressure not reported | unknown |
| CaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.7 | Pressure not reported | unknown |
| CaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 7.8 | Pressure not reported | unknown |
| CaAlSi Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6.5 | Pressure not reported | unknown |
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