Lateral electron tunneling through single self-assembled InAs quantum dots coupled to superconducting nanogap electrodes
K. Shibata, C. Buizert, A. Oiwa, K. Hirakawa, S. Tarucha
arXiv:0711.1945 · DOI 10.1063/1.2779970 · 2007-11-13 · Applied Physics Letters
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Abstract
We have fabricated superconductor-quantum dot-superconductor (SC-QD-SC) junctions by using SC aluminum electrodes with narrow gaps laterally contacting a single self-assembled InAs QD. The fabricated junctions exhibited clear Coulomb staircases and Coulomb oscillations at 40 mK. Furthermore, clear suppression in conductance was observed for the source-drain voltage $|V_{\rm SD}| < 2Δ/e$, where $Δ$ is the SC energy gap of Al. The absence of Josephson current that flows through QDs is due to the strong Coulomb interaction and non-negligible thermal fluctuation in our measurement system.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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