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Enhanced superconducting pairing interaction in indium-doped tin telluride

A. S. Erickson, J. -H. Chu, M. F. Toney, T. H. Geballe, I. R. Fisher

arXiv:0809.0924 · DOI 10.1103/PhysRevB.79.024520 · 2008-09-04 · Physical Review B

T1theoretical82 citations

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Abstract

The ferroelectric degenerate semiconductor Sn$_{1-δ}$Te exhibits superconductivity with critical temperatures, $T_c$, of up to 0.3 K for hole densities of order 10$^{21}$ cm$^{-3}$. When doped on the tin site with greater than $x_c$ $= 1.7(3)%$ indium atoms, however, superconductivity is observed up to 2 K, though the carrier density does not change significantly. We present specific heat data showing that a stronger pairing interaction is present for $x > x_c$ than for $x < x_c$. By examining the effect of In dopant atoms on both $T_c$ and the temperature of the ferroelectric structural phase transition, $T_{SPT}$, we show that phonon modes related to this transition are not responsible for this $T_c$ enhancement, and discuss a plausible candidate based on the unique properties of the indium impurities.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Sn0.995-xInxTe

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2Pressure not reportedunknown
Sn0.995-xInxTe

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0.35Pressure not reportedunknown
Sn1-δTe

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0.3Pressure not reportedunknown
Sn1-δTe

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—Pressure not reportedunknown
Sn1-δTe

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0.1Pressure not reportedunknown
Sn1-δTe

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1Pressure not reportedunknown

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