Temperature dependence of resistivity and Hall-coefficient in a strongly disordered metal: NbN
Madhavi Chand, Archana Mishra, Y. M. Xiong, Anand Kamlapure, S. P. Chockalingam, John Jesudasan, Vivas Bagwe, Mintu Mondal, P. W. Adams, Vikram Tripathi, Pratap Raychaudhuri
arXiv:0907.4735 · DOI 10.1103/PhysRevB.80.134514 · 2009-07-27 · Physical Review B
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Abstract
We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these films varies from 8.13K to 16.8K. While our least disordered film displays usual metallic behavior, for all the films with kFl<8.13, both and are negative up to 300K. We observe that R_H(T) varies linearly with rho(T) for all the films. Measurements performed on a 2nm thick Be film shows similar behavior >. This behavior is inconsistent with existing theories of localization and e-e interactions in a disordered metal.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 8.13 | Pressure not reported | unknown |
| NbN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 16.8 | Pressure not reported | unknown |
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