Evidence of fractional matching states in nanoperforated Nb thin film grown on porous silicon
M. Trezza, C. Cirillo, S. L. Prischepa, C. Attanasio
arXiv:0912.0711 · DOI 10.1209/0295-5075/88/57006 · 2009-12-03
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Abstract
Resistive transitions have been measured on a perforated Nb thin film with a lattice of holes with the period of the order of ten nanometers. Bumps in the dR/dH versus H curves have been observed at the first matching field and its fractional values, 1/4, 1/9 and 1/16. This effect has been related to different vortex lattice configurations made available by the underlying lattice of holes.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | unknown |
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