Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

S. Piano; R. Grein; C. J. Mellor; K. Vyborny; R. Campion; M. Wang; M. Eschrig; B. L. Gallagher

doi:10.1103/PhysRevB.83.081305

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Spin polarization of (Ga,Mn)As measured by Andreev Spectroscopy: The role of spin-active scattering

S. Piano, R. Grein, C. J. Mellor, K. Vyborny, R. Campion, M. Wang, M. Eschrig, B. L. Gallagher

arXiv:1008.1788 · DOI 10.1103/PhysRevB.83.081305 · 2010-08-10 · Physical Review B

T1theoretical22 citations

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Abstract

We investigate the spin-polarization of the ferromagnetic semiconductor (Ga,Mn)As by point contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC{\approx}57%, in considerably better agreement with the k{\cdot}p kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	—	Pressure not reported	unknown