Spin polarization of (Ga,Mn)As measured by Andreev spectroscopy: The role of spin-active scattering
S. Piano, R. Grein, C. J. Mellor, K. Výborný, R. Campion, M. Wang, M. Eschrig, B. L. Gallagher
DOI 10.1103/PhysRevB.83.081305 · Physical Review B
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Abstract
We investigate the spin polarization of the ferromagnetic semiconductor (Ga,Mn)As by point-contact Andreev reflection spectroscopy. The conductance spectra are analyzed using a recent theoretical model that accounts for momentum- and spin-dependent scattering at the interface. This allows us to fit the data without resorting, as in the case of the standard spin-dependent Blonder-Tinkham-Klapwijk (BTK) model, to an effective temperature or a statistical distribution of superconducting gaps. We find a transport polarization PC≈57%, in considerably better agreement with the k⃗·p⃗ kinetic-exchange model of (Ga,Mn)As, than the significantly larger estimates inferred from the BTK model. The temperature dependence of the conductance spectra is fully analyzed.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 5.6 | Pressure not reported | unknown |
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