Mobility analysis of FeTe thin films

I. Tsukada; M. Hanawa; Seiki Komiya; A. Ichinose; T. Akiike; Y. Imai; A. Maeda

doi:10.1016/j.physc.2011.05.012

← Back to search

Mobility analysis of FeTe thin films

I. Tsukada, M. Hanawa, Seiki Komiya, A. Ichinose, T. Akiike, Y. Imai, A. Maeda

arXiv:1009.6035 · DOI 10.1016/j.physc.2011.05.012 · 2010-09-30 · Journal of the Physical Society of Japan

T1theoretical16 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

The Hall effect is investigated in detail for nonsuperconducting and superconducting FeTe thin films. The Hall coefficient commonly exhibits a sign reversal from positive in a high-temperature paramagnetic state to negative in a low-temperature antiferromagnetic state. Phenomenological analysis by a simple two-band Drude model indicates that hole mobility is significantly suppressed in the antiferromagnetic state. When suppression of the hole mobility is insufficient, superconductivity shows up in FeTe. This result strongly suggests that the itinerancy in both hole and electron channels is the essential factor for the occurrence of superconductivity in iron chalcogenide superconductors.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
FeTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	11	Pressure not reported	onset