Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin films

I. Tsukada; M. Hanawa; Seiki komiya; A. Ichinose; T. Akiike; Y. Imai; A. Maeda

doi:10.1016/j.physc.2011.05.012

← Back to search

Hall effect of FeTe and Fe(Se_1-x_Te_x_) thin films

I. Tsukada, M. Hanawa, Seiki komiya, A. Ichinose, T. Akiike, Y. Imai, A. Maeda

arXiv:1102.0332 · DOI 10.1016/j.physc.2011.05.012 · 2011-02-02 · Physica C-superconductivity and Its Applications

T1theoretical20 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

The Hall effect is investigated in thin-film samples of iron-chalcogenide superconductors in detail. The Hall coefficient (RH) of FeTe and Fe(Se1-xTex) exhibits a similar positive value around 300 K, indicating that the high-temperature normal state is dominated by hole-channel transport. FeTe exhibits a sign reversal from positive to negative across the transition to the low-temperature antiferromagnetic state, indicating the occurrence of drastic reconstruction in the band structure. The mobility analysis using the carrier density theoretically calculated reveals that the mobility of holes is strongly suppressed to zero, and hence the electric transport looks to be dominated by electrons. The Se substitution to Te suppresses the antiferromagnetic long-range order and induces superconductivity instead. The similar mobility analysis for Fe(Se0.4Te0.6) and Fe(Se0.5Te0.5) thin films shows that the mobility of electrons increases with decreasing temperature even in the paramagnetic state, and keeps sufficiently high values down to the superconducting transition temperature. From the comparison between FeTe and Fe(Se1-xTex), it is suggested that the coexistence of 'itinerant' carriers both in electron and hole channels is indispensable for the occurrence of superconductivity.