Electric--field effect on electron-doped infinite-layer Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films
L. Fruchter, F. Bouquet, Z. Z. Li
arXiv:1103.1548 · DOI 10.1103/PhysRevB.84.092502 · 2011-03-08 · Physical Review B
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Abstract
We have used the electric--field effect to modulate the resistivity of the surface of underdoped Sr$_{0.88}$La$_{0.12}$CuO$_{2+x}$ thin films, allowing opposite modifications of the electron and hole density in the CuO$_2$ planes, an original situation with respect to conventional chemical doping in electron-doped materials. When the Hall effect indicates a large contribution of a hole band, the electric--field effect on the normal state resistivity is however dominated by the electrons, and the superconducting transition temperature increases when carriers are transfered from holes to electrons.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sr0.88La0.12CuO2+x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 12 | Pressure not reported | onset |
| Sr0.88La0.12CuO2+x Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 28 | Pressure not reported | onset |
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