Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors

Tatsuya Honma; Pei-Herng Hor

doi:10.1016/j.physc.2011.05.244

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Universal intrinsic doping behavior of in-plane dc conductivity for hole-doped high-temperature cuprate superconductors

Tatsuya Honma, Pei-Herng Hor

arXiv:1105.4917 · DOI 10.1016/j.physc.2011.05.244 · 2011-05-25 · Physica C-superconductivity and Its Applications

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Abstract

Understanding the normal state transport properties in hole-doped high-temperature cuprate superconductors (HTCSs) is a challenging task which has been widely believed to be one of the key steps toward revealing the pairing mechanism of high-temperature superconductivity. Here, we present a true intrinsic and universal doping dependence of in-plane dc conductivity for all underdoped HTCSs. The doping dependence of in-plane dc conductivity normalized to that at optimal doping can be represented by a simple exponential formula. The doping behavior of the square of the nodal Fermi velocity derived by the high-resolution laser-based angle-resolved photoemission spectroscopy in the superconducting state follows reasonably well the universal intrinsic doping behavior. Our findings suggest a commonality of the low-energy quasiparticles both in the normal and superconducting states that place a true universal and stringent constraint on the mechanism of high-temperature superconductivity for HTCSs.