Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

T. Honma; P. H. Hor

doi:10.1088/0953-2048/19/9/004

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Universal optimal hole-doping concentration in single-layer high-temperature cuprate superconductors

T. Honma, P. H. Hor

arXiv:cond-mat/0602452 · DOI 10.1088/0953-2048/19/9/004 · 2006-02-20 · Superconductor Science and Technology

T2theoretical16 citations

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Abstract

We argue that in cuprate physics there are two types, hole content per CuO$_2$ plane ($P_{pl}$) and the corresponding hole content per unit volume ($P_{3D}$), of hole-doping concentrations for addressing physical properties that are two-dimensional (2D) and three-dimensional (3D) in nature, respectively. We find that superconducting transition temperature ($T_c$) varies systematically with $P_{3D}$ as a superconducting \textquotedblleft $dome$\textquotedblright with a universal optimal hole-doping concentration $P_{3D}^{opt.}$ = 1.6 $\times$ 10$^{21}$ cm$^{-3}$ for single-layer high temperature superconductors. We suggest that $P_{3D}^{opt.}$ determines the upper bound of the electronic energy of underdoped single-layer high-$T_c$ cuprates.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
La2-xSrxCuO4 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	37	Pressure not reported	unknown