Vanishing quasiparticle density in a hybrid Al/Cu/Al single-electron transistor
O. -P. Saira, A. Kemppinen, V. F. Maisi, J. P. Pekola
arXiv:1106.1326 · DOI 10.1103/PhysRevB.85.012504 · 2011-06-07 · Physical Review B
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Abstract
The achievable fidelity of many nanoelectronic devices based on superconducting aluminum is limited by either the density of residual nonequilibrium quasiparticles n_qp or the density of quasiparticle states in the gap, characterized by Dynes parameter γ. We infer upper bounds n_qp < 0.033 um^-3 and γ< 1.6*10^-7 from transport measurements performed on Al/AlOx/Cu single-electron transistors, improving previous results by an order of magnitude. Owing to efficient microwave shielding and quasiparticle relaxation, typical number of quasiparticles in the superconducting leads is zero.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.384 | Pressure not reported | onset |
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