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Electrochemical synthesis and superconducting phase diagram of Cu_xBi2Se3

M. Kriener, Kouji Segawa, Zhi Ren, Satoshi Sasaki, Shohei Wada, Susumu Kuwabata, Yoichi Ando

arXiv:1108.1887 · DOI 10.1103/PhysRevB.84.054513 · 2011-08-09 · Physical Review B

T1theoretical79 citations

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Abstract

The superconducting Cu_xBi_2Se_3 is an electron-doped topological insulator and is a prime candidate of the topological superconductor which still awaits discovery. The electrochemical intercalation technique for synthesizing Cu_xBi2Se3 offers good control of restricting Cu into the van-der-Waals gap and yields samples with shielding fractions of up to ~50%. We report essential details of this synthesis technique and present the established superconducting phase diagram of T_c vs x, along with a diagram of the shielding fraction vs x. Intriguingly, those diagrams suggest that there is a tendency to spontaneously form small islands of optimum superconductor in this material.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Cu0.09Bi2Se3

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3.45Pressure unresolvedonset
Cu0.64Bi2Se3

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2.2Pressure unresolvedonset
Cu0.14Bi2Se3

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—Pressure unresolvedzero_resistance
Cu0.29Bi2Se3

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—Pressure unresolvedzero_resistance
Cu0.40Bi2Se3

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—Pressure unresolvedzero_resistance

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