Electrochemical synthesis and superconducting phase diagram of CuxBi2Se3
M. Kriener, Kouji Segawa, Zhi Ren, Satoshi Sasaki, Shohei Wada, Susumu Kuwabata, Yoichi Ando
DOI 10.1103/PhysRevB.84.054513 · Physical Review B
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Abstract
The superconducting CuxBi2Se3 is an electron-doped topological insulator and is a prime candidate of the topological superconductor which still awaits discovery. The electrochemical intercalation technique for synthesizing CuxBi2Se3 offers good control of restricting Cu into the van der Waals gap and yields samples with shielding fractions of up to ∼50%. We report essential details of this synthesis technique and present the established superconducting phase diagram of Tc vs x, along with a diagram of the shielding fraction vs x. Intriguingly, those diagrams suggest that there is a tendency to spontaneously form small islands of optimum superconductor in this material.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| CuxBi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.8 | Pressure not reported | onset |
| Cu0.14Bi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.2 | Pressure not reported | onset |
| Cu0.29Bi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.2 | Pressure not reported | onset |
| Cu0.40Bi2Se3 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 3.2 | Pressure not reported | onset |
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