Identifying capacitive and inductive loss in lumped element superconducting hybrid titanium nitride/aluminum resonators
Michael R. Vissers, Martin P. Weides, Jeffrey S. Kline, Martin O. Sandberg, David P. Pappas
arXiv:1203.5112 · DOI 10.1063/1.4730389 · 2012-03-22 · Applied Physics Letters
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Abstract
We present a method to systematically locate and extract capacitive and inductive losses in superconducting resonators at microwave frequencies by use of mixed-material, lumped element devices. In these devices, ultra-low loss titanium nitride was progressively replaced with aluminum in the inter-digitated capacitor and meandered inductor elements. By measuring the power dependent loss at 50 mK as the Al-TiN fraction in each element is increased, we find that at low electric field, i.e. in the single photon limit, the loss is two level system in nature and is correlated with the amount of Al capacitance rather than the Al inductance. In the high electric field limit, the remaining loss is linearly related to the product of the Al area times its inductance and is likely due to quasiparticles generated by stray radiation. At elevated temperature, additional loss is correlated with the amount of Al in the inductance, with a power independent TiN-Al interface loss term that exponentially decreases as the temperature is reduced. The TiN-Al interface loss is vanishingly small at the 50 mK base temperature.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| TiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.75 | Pressure not reported | unknown |
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.2 | Pressure not reported | unknown |
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