Etch Induced Microwave Losses in Titanium Nitride Superconducting Resonators
Martin Sandberg, Michael R. Vissers, Jeffrey S. Kline, Martin Weides, Jiansong Gao, David S. Wisbey, David P. Pappas
arXiv:1205.3153 · DOI 10.1063/1.4729623 · 2012-05-14 · Applied Physics Letters
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Abstract
We have investigated the correlation between the microwave loss and patterning method for coplanar waveguide titanium nitride resonators fabricated on Si wafers. Three different methods were investigated: fluorine- and chlorine-based reactive ion etches and an argon-ion mill. At high microwave probe powers the reactive etched resonators showed low internal loss, whereas the ion-milled samples showed dramatically higher loss. At single-photon powers we found that the fluorine-etched resonators exhibited substantially lower loss than the chlorine-etched ones. We interpret the results by use of numerically calculated filling factors and find that the silicon surface exhibits a higher loss when chlorine-etched than when fluorine-etched. We also find from microscopy that re-deposition of silicon onto the photoresist and side walls is the probable cause for the high loss observed for the ion-milled resonators
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