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Pressure Study of BiS2-Based Superconductors Bi4O4S3 and La(O,F)BiS2

Hisashi Kotegawa, Yusuke Tomita, Hideki Tou, Hiroki Izawa, Yoshikazu Mizuguchi, Osuke Miura, Satoshi Demura, Keita Deguchi, Yoshihiko Takano

arXiv:1207.6935 · DOI 10.1143/JPSJ.81.103702 · 2012-07-30 · arXiv: Superconductivity

T1theoretical60 citations

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Abstract

We report the electrical resistivity measurements under pressure for the recently discovered BiS2-based layered superconductors Bi4O4S3 and La(O,F)BiS2. In Bi4O4S3, the transition temperature Tc decreases monotonically without a distinct change in the metallic behavior in the normal state. In La(O,F)BiS2, on the other hand, Tc initially increases with increasing pressure and then decreases above ? 1 GPa. The semiconducting behavior in the normal state is suppressed markedly and monotonically, whereas the evolution of Tc is nonlinear. The strong suppression of the semiconducting behavior without doping in La(O,F)BiS2 suggests that the Fermi surface is located in the vicinity of some instability. In the present study, we elucidate that the superconductivity in the BiS2 layer favors the Fermi surface at the boundary between the semiconducting and metallic behaviors.

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FormulaReported Tc (K)Pressure (GPa)Type
Bi4O4S3

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—Pressure not reportedunknown
La(O,F)BiS2

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—Pressure not reportedunknown

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