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Microwave properties of superconducting atomic-layer deposited TiN films

P. C. J. J. Coumou, M. R. Zuiddam, E. F. C. Driessen, P. J. de Visser, J. J. A. Baselmans, T. M. Klapwijk

arXiv:1212.4434 · DOI 10.1109/TASC.2012.2236603 · 2012-12-18 · IEEE Transactions on Applied Superconductivity

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Abstract

We have grown superconducting TiN films by atomic layer deposition with thicknesses ranging from 6 to 89 nm. This deposition method allows us to tune the resistivity and critical temperature by controlling the film thickness. The microwave properties are measured, using a coplanar-waveguide resonator, and we find internal quality factors above a million, high sheet inductances (5.2-620 pH), and pulse response times up to 100 μs. The high normal state resistivity of the films (> 100 μΩcm) affects the superconducting state and thereby the electrodynamic response. The microwave response is modeled using a quasiparticle density of states modified with an effective pair-breaker,consistently describing the measured temperature dependence of the quality factor and the resonant frequency.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
TiN

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1.5Pressure not reportedunknown
TiN

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2.2Pressure not reportedunknown
TiN

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2.7Pressure not reportedunknown
TiN

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.2Pressure not reportedunknown
TiN

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

3.6Pressure not reportedunknown

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