Resonant inelastic X-ray scattering study of intra-band charge excitations in hole-doped high-Tc cuprates
S. Wakimoto, K. Ishii, H. Kimura, K. Ikeuchi, M. Yoshida, T. Adachi, D. Casa, M. Fujita, Y. Fukunaga, T. Gog, Y. Koike, J. Mizuki, K. Yamada
arXiv:1302.7023 · DOI 10.1103/PhysRevB.87.104511 · 2013-02-27 · Physical Review B
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Abstract
We have performed resonant inelastic x-ray scattering (RIXS) near the Cu-K edge on cuprate superconductors La(2-x)Sr(x)CuO(4), La(2-x)Ba(x)CuO(4), La(2-x)Sr(x)Cu(1-y)Fe(y)O(4) and Bi(1.76)Pb(0.35)Sr(1.89)CuO(6+d), covering underdoped to heavily overdoped regime and focusing on charge excitations inside the charge-transfer gap. RIXS measurements of the 214 systems with Ei = 8.993 keV have revealed that the RIXS intensity at 1 eV energy transfer has a minimum at (0,0) and maxima at (0.4pi, 0) and $(0, 0.4pi) for all doping points regardless of the stripe ordered state, suggesting that the corresponding structure is not directly related to stripe order. Measurements with Ei = 9.003 keV on metallic La(1.7)Sr(0.3)CuO(4) and Bi(1.76)Pb(0.35)Sr(1.89)CuO(6+d) exhibit a dispersive intra-band excitation below 4 eV, similar to that observed in the electron-doped Nd(1.85)Ce(0.15)CuO(4). This is the first observation of a dispersive intra-band excitation in a hole doped system, evidencing that both electron and hole doped systems have a similar dynamical charge correlation function.
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