The electron-phonon relaxation time in thin superconducting titanium nitride films

A. Kardakova; M. Finkel; D. Morozov; V. Kovalyuk; P. An; C. Dunscombe; M. Tarkhov; P. Mauskopf; T. M. Klapwijk; G. Goltsman

doi:10.1063/1.4851235

The electron-phonon relaxation time in thin superconducting titanium nitride films

A. Kardakova, M. Finkel, D. Morozov, V. Kovalyuk, P. An, C. Dunscombe, M. Tarkhov, P. Mauskopf, T. M. Klapwijk, G. Goltsman

arXiv:1312.5966 · DOI 10.1063/1.4851235 · 2013-12-20 · Applied Physics Letters

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Abstract

We report on the direct measurement of the electron-phonon relaxation time, τeph, in disordered TiN films. Measured values of τeph are from 5.5 ns to 88 ns in the 4.2 to 1.7 K temperature range and consistent with a T-3 temperature dependence. The electronic density of states at the Fermi level N0 is estimated from measured material parameters. The presented results confirm that thin TiN films are promising candidate-materials for ultrasensitive superconducting detectors.