Synthesis and properties of SmO0.5F0.5BiS2 and enhancement in Tc in La1-ySmyO0.5F0.5BiS2
Gohil S. Thakur, G. Kalai Selvan, Zeba Haque, L. C. Gupta, S. L. Samal, S. Arumugam, Ashok K. Ganguli
arXiv:1410.0751 · DOI 10.1021/ic5023938 · 2014-10-03
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Abstract
Crystal structure and properties of a new member of oxy-bismuth-sulfide SmO1-xFxBiS2 are reported here. The compounds SmO1-xFxBiS2 (x = 0.0 and 0.5) are found to be isostructural with LaOBiS2 and crystallize in the CeOBiS2 type structure (P4/nmm). Sm substitution in LaO0.5F0.5BiS2, (La1-ySmyO0.5F0.5BiS2), leads to a gradual decrease in a-lattice constant however the c-lattice constant does not show such a gradual trend. Enhancement in Tc is achieved upon partially substituting La by smaller Sm ion. Maximum Tc ~ 4.6 K was observed for composition with y = 0.8. Disobeying this trend Tc disappears unexpectedly in composition SmO0.5F0.5BiS2 (y = 1.0). Both the undoped and F-doped (x = 0.0 and 0.5) compounds are paramagnetic exhibiting semiconducting behavior down to 2 K.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| La0.2Sm0.8O0.5F0.5BiS2 Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.6 | Pressure not reported | unknown |
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