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Pressure-Induced Phase Transition in La$_{1-x}$Sm$_{x}$O$_{0.5}$F$_{0.5}$BiS$_2$

Y. Fang, D. Yazici, B. D. White, M. B. Maple

arXiv:1507.03172 · DOI 10.1103/PhysRevB.92.094507 · 2015-07-12 · Physical Review B

T3theoretical6 citations

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Abstract

Electrical resistivity measurements on La$_{1-x}$Sm$_{x}$O$_{0.5}$F$_{0.5}$BiS$_{2}$ ($x$ = 0.1, 0.3, 0.6, 0.8) have been performed under applied pressures up to 2.6 GPa from 2 K to room temperature. The superconducting transition temperature $T$$_{c}$ of each sample significantly increases at a Sm-concentration dependent pressure $P$$_{\rm t}$, indicating a pressure-induced phase transition from a low-$T$$_{c}$ to a high-$T$$_{c}$ phase. The compounds that have higher Sm concentrations have higher $T$$_{c}$ values at ambient pressure; however, the $T$$_{c}$ values at $P$ $>$ $P$$_{\rm t}$ decrease with $x$ and $P$$_{\rm t}$ shifts to higher pressures with Sm substitution. In the normal state, semiconducting-like behavior is suppressed and metallic conduction is induced with increasing pressure in all of the samples. These results suggest that the pressure dependence of $T$$_{c}$ for the BiS$_{2}$-based superconductors is related to the lattice parameters at ambient pressure and enable us to estimate the evolution of $T$$_{c}$ for SmO$_{0.5}$F$_{0.5}$BiS$_{2}$ under pressure.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La0.9Sm0.1O0.5F0.5BiS2

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2.7Pressure unresolvedmidpoint
La0.2Sm0.8O0.5F0.5BiS2

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5.4Pressure unresolvedmidpoint
La0.9Sm0.1O0.5F0.5BiS2

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9.40.59 GPamidpoint
La0.2Sm0.8O0.5F0.5BiS2

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6.21.8 GPamidpoint
H2S

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190Pressure not reportedunknown
Bi4O4S3

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—Pressure unresolvedunknown
LaO0.5F0.5BiS2

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10.6Pressure not reportedunknown
LaO0.5F0.5BiS2

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3Pressure unresolvedunknown
LaO0.5F0.5BiS2

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10.70.7 GPaunknown

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