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Doping dependence of the critical current in Bi2Sr2CaCu2Oy

Muntaser Naamneh, Juan Carlos Campuzano, Amit Kanigel

arXiv:1411.6393 · DOI 10.1103/PhysRevB.90.224501 · 2014-11-24 · Physical Review B

T1theoretical7 citations

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Abstract

The doping dependence of the critical current density, $J_{c}$, was measured in a series of high quality c-axis oriented ${\rm Bi_2Sr_2CaCu_2O_{8+δ}}$ thin films. For each doping level we measured the temperature dependence of $J_{c}$. We find that all samples have the same temperature dependence, but the critical current at zero temperature, $J_{c}(0)$, has a non-trivial doping dependence with a maximum at a unique doping level in the overdoped side of the superconducting dome.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Bi2Sr2CaCu2O8+δ

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65Pressure not reportedzero_resistance

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