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Proximity to Fermi-surface topological change in superconducting LaO0.54F0.46BiS2

K. Terashima, J. Sonoyama, T. Wakita, M. Sunagawa, K. Ono, H. Kumigashira, T. Muro, M. Nagao, S. Watauchi, I. Tanaka, H. Okazaki, Y. Takano, O. Miura, Y. Mizuguchi, H. Usui, K. Suzuki, K. Kuroki, Y. Muraoka, T. Yokoya

arXiv:1412.7786 · DOI 10.1103/PhysRevB.90.220512 · 2014-12-25 · Physical Review B

T1theoretical19 citations

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Abstract

The electronic structure of nearly optimally-doped novel superconductor LaO$_{1-x}$F$_x$BiS$_2$ (${\it x}$ = 0.46) was investigated using angle-resolved photoemission spectroscopy (ARPES). We clearly observed band dispersions from 2 to 6 eV binding energy and near the Fermi level (${\it E}_{\rm F}$), which are well reproduced by first principles calculations when the spin-orbit coupling is taken into account. The ARPES intensity map near ${\it E}_{\rm F}$ shows a square-like distribution around the $Γ$(Z) point in addition to electronlike Fermi surface (FS) sheets around the X(R) point, indicating that FS of LaO$_{0.54}$F$_{0.46}$BiS$_2$ is in close proximity to the theoretically-predicted topological change.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
LaO0.5F0.5BiS2

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10.6Pressure not reportedunknown
LaO0.54F0.46BiS2

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3.1Pressure not reportedzero_resistance

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