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Homes Scaling in Ionic Liquid Gated La$_{2}$CuO$_{4+x}$ Thin Films

J. Kinney, J. Garcia-Barriocanal, A. M. Goldman

arXiv:1507.06292 · 2015-07-22

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Abstract

Finding more efficient ways of exploring the doping phase diagrams of high temperature superconductors as well as probing the fundamental properties of these materials are essential ingredients for driving the discovery of new materials. We use a doping technique involving gating with ionic liquids to systematically and continuously tune the T$_{c}$ of superconducting La$_{2}$CuO$_{4+x}$ thin films. We probe both the transport properties and the penetration depth of these samples and find that Homes scaling $λ^{-2}\proptoσT_{c}$ is obeyed, consistent with these materials being in the dirty limit. This result is independent of the precise mechanism for the gating process as all of the parameters of the scaling relationship are determined by direct measurements on the films.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
La2CuO4+x

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—Pressure not reportedmidpoint
La2CuO4+x

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedmidpoint

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