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Internal pressure in superconducting Cu intercalated Bi$_2$Se$_3$

Amit Ribak, Khanan B. Chashka, Elias Lahoud, Muntaser Naamneh, Shahar Rinott, Yair Ein-Eli, Nicholas C. Plumb, Ming Shi, Emile Rienks, Amit Kanigel

arXiv:1601.06954 · DOI 10.1103/PhysRevB.93.064505 · 2016-01-26 · Physical Review B

T1theoretical13 citations

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Abstract

Angle-resolved photoemission spectroscopy is used to study the band-structure of superconducting electrochemically intercalated Cu$_x$Bi$_2$Se$_3$. We find that in these samples the band-gap at the $Γ$ point is much larger than in pristine Bi$_2$Se$_3$. Comparison to the results of band-structure calculations indicates that the origin of this large gap is internal stress caused by disorder created by the Cu intercalation. We suggest that the internal pressure may be necessary for superconductivity in Cu$_x$Bi$_2$Se$_3$.

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FormulaReported Tc (K)Pressure (GPa)Type
Cu0.27Bi2Se3

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3.8Pressure not reportedzero_resistance

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