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High-Pressure Synthesis and Superconductivity of Ag-doped Topological Crystalline Insulator SnTe (Sn1-xAgxTe with x = 0-0.5)

Yoshikazu Mizuguchi, Osuke Miura

arXiv:1602.05319 · DOI 10.7566/JPSJ.85.053702 · 2016-02-17 · arXiv: Superconductivity

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Abstract

We have synthesized the single-phase polycrystalline samples of Sn1-xAgxTe, Ag-doped topological crystalline insulator SnTe, with a range of x = 0-0.5 using a high-pressure synthesis method. The crystal structure of Sn1-xAgxTe at room temperature is a cubic NaCl-type structure, which does not vary upon Ag substitution. Bulk superconductivity with a transition temperature of 2.4 K was observed for x = 0.15-0.25, and the optimal Ag content was x = 0.2. The Sn1-xAgxTe superconducting phase will be useful for understanding the superconductivity nature and mechanisms of the carrier-doped SnTe system.

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FormulaReported Tc (K)Pressure (GPa)Type
Sn0.8Ag0.2Te

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2.4Pressure not reportedunknown

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