Magnetic flux disorder and superconductor-insulator transition in nanohole thin films

Enzo Granato

doi:10.1103/PhysRevB.94.060504

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Magnetic flux disorder and superconductor-insulator transition in nanohole thin films

Enzo Granato

arXiv:1607.08651 · DOI 10.1103/PhysRevB.94.060504 · 2016-07-28 · Physical Review B

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Abstract

We study the superconductor-insulator transition in nanohole ultrathin films in a transverse magnetic field by numerical simulation of a Josephson-junction array model. Geometrical disorder due to the random location of nanoholes in the film corresponds to random flux in the array model. Monte Carlo simulation in the path-integral representation is used to determine the critical behavior and the universal resistivity at the transition as a function of disorder and average number of flux quanta per cell, $f_o$. The resistivity increases with disorder for noninteger $ f_o$ while it decreases for integer $ f_o$, and reaches a common constant value in a vortex-glass regime above a critical value of the flux disorder $D_f^c$. The estimate of $D_f^c$ and the resistivity increase for noninteger $ f_o$ are consistent with recent experiments on ultrathin superconducting films with positional disordered nanoholes.