Magnetic flux disorder and superconductor-insulator transition in nanohole thin films
Enzo Granato
DOI 10.1103/PhysRevB.94.060504 · Physical Review B
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Abstract
We study the superconductor-insulator transition in nanohole ultrathin films in a transverse magnetic field by numerical simulation of a Josephson-junction array model. Geometrical disorder due to the random location of nanoholes in the film corresponds to random flux in the array model. Monte Carlo simulation in the path-integral representation is used to determine the critical behavior and the universal resistivity at the transition as a function of disorder and average number of flux quanta per cell, fo. The resistivity increases with disorder for noninteger fo while it decreases for integer fo, and reaches a common constant value in a vortex-glass regime above a critical value of the flux disorder Dfc. The estimate of Dfc and the resistivity increase for noninteger fo are consistent with recent experiments on ultrathin superconducting films with positional disordered nanoholes.
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