Quasi-localized Impurity State in Doped Topological Crystalline Insulator Sn$_{0.9}$In$_{0.1}$Te Probed by $^{125}$Te-NMR
Maeda, Satoki, Katsube, Shota, Zheng, Guo-qing
arXiv:1612.00153 · DOI 10.7566/JPSJ.86.024702 · 2017-02-01
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Abstract
The In-doped topological crystalline insulator Sn$_{1-x}$In$_x$Te is a promising candidate for a topological superconductor, where it is theoretically suggested that In creates an impurity state responsible for superconductivity. We synthesized high purity Sn$_{1-x}$In$_x$Te samples and performed $^{125}$Te-nuclear magnetic resonance (NMR) measurements. The NMR spectra under a magnetic field of $H_0$ = 5 T show a broadening characteristic due to a localized impurity state. The spin-lattice relaxation rate ($1/T_1$) divided by temperature shows a Curie-Weiss like temperature-dependence under $H_0$ = 0.1 T but is temperature-independent under $H_0$ = 5 T. These results indicate the existence of quasi-localized impurity states due to In doping.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Sn1-xInxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1 | Pressure not reported | unknown |
| Sn0.9In0.1Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.68 | Pressure not reported | unknown |
| Sn0.9In0.1Te Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.45 | Pressure not reported | unknown |
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