← Back to search

Strong dopant dependence of electric transport in ion-gated MoS2

Erik Piatti, Qihong Chen, Jianting Ye

arXiv:1704.07618 · DOI 10.1063/1.4992477 · 2017-04-25 · Applied Physics Letters

T326 citations

Active bibliographic source — not scientific approval

Bibliographic access preserves source history; it does not approve extracted materials or validate reported claims. Review warnings on each occurrence separately.

Abstract

We report modifications of the temperature-dependent transport properties of $\mathrm{MoS_2}$ thin flakes via field-driven ion intercalation in an electric double layer transistor. We find that intercalation with $\mathrm{Li^+}$ ions induces the onset of an inhomogeneous superconducting state. Intercalation with $\mathrm{K^+}$ leads instead to a disorder-induced incipient metal-to-insulator transition. These findings suggest that similar ionic species can provide access to different electronic phases in the same material.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
MoS2

Archive — visibility unverified

Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

Similar papers