Thermocompression Bonding Technology for Multilayer Superconducting Quantum Circuits
C. R. H. McRae, J. H. Béjanin, Z. Pagel, A. O. Abdallah, T. G. McConkey, C. T. Earnest, J. R. Rinehart, M. Mariantoni
arXiv:1705.02435 · DOI 10.1063/1.5003169 · 2017-05-06 · Applied Physics Letters
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Abstract
Extensible quantum computing architectures require a large array of quantum devices operating with low error rates. A quantum processor based on superconducting quantum bits can be scaled up by stacking microchips that each perform different computational functions. In this article, we experimentally demonstrate a thermocompression bonding technology that utilizes indium films as a welding agent to attach pairs of lithographically-patterned chips. We perform chip-to-chip indium bonding in vacuum at $190^{\circ}C$ with indium film thicknesses of $150 nm$. We characterize the dc and microwave performance of bonded devices at room and cryogenic temperatures. At $10 mK$, we find a dc bond resistance of $515 nΩmm^2$. Additionally, we show minimal microwave reflections and good transmission up to $6.8 GHz$ in a tunnel-capped, bonded device as compared to a similar uncapped device. As a proof of concept, we fabricate and measure a set of tunnel-capped superconducting resonators, demonstrating that our bonding technology can be used in quantum computing applications.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Al Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 1.2 | Pressure not reported | unknown |
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