Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)

K. Ahmadi-Majlan; H. Zhang; X. Shen; M. J. Moghadam; M. Chrysler; P. Conlin; R. Hensley; D. Su; J. Y. T. Wei; J. H. Ngai

Superconducting epitaxial YBa2Cu3O7-δ on SrTiO3 buffered Si (001)

K. Ahmadi-Majlan, H. Zhang, X. Shen, M. J. Moghadam, M. Chrysler, P. Conlin, R. Hensley, D. Su, J. Y. T. Wei, J. H. Ngai

arXiv:1710.08600 · 2017-10-24

T1experimental

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Abstract

Thin films of optimally-doped (001)-oriented YBa2Cu3O7-δ are epitaxially integrated on silicon (001) through growth on a single crystalline SrTiO3 buffer. The former is grown using pulsed-laser deposition and the latter is grown on Si using oxide molecular beam epitaxy. The single crystal nature of the SrTiO3 buffer enables high quality YBa2Cu3O7-δ films exhibiting high transition temperatures to be integrated on Si. For a 30 nm thick SrTiO3 buffer, 50 nm thick YBa2Cu3O7-δ films that exhibit a transition temperature of ~ 93 K, and a narrow transition width (< 5 K) are achieved. The integration of single crystalline YBa2Cu3O7-δ on Si (001) paves the way for the potential exploration of cuprate materials in a variety of applications.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
YBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	93	Pressure not reported	unknown