Diamond anvil cell using boron-doped diamond electrodes covered with undoped diamond insulating layer
Ryo Matsumoto, Aichi Yamashita, Hiroshi Hara, Tetsuo Irifune, Shintaro Adachi, Hiroyuki Takeya, Yoshihiko Takano
arXiv:1803.01300 · DOI 10.7567/APEX.11.053101 · 2018-03-04 · Applied Physics Express
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Abstract
Diamond anvil cell using boron-doped metallic diamond electrodes covered with undoped diamond insulating layer have been developed for electrical transport measurements under high pressure. These designed diamonds were grown on a bottom diamond anvil via a nanofabrication process combining microwave plasma-assisted chemical vapor deposition and electron beam lithography. The resistance measurements of high quality FeSe superconducting single crystal under high pressure were successfully demonstrated by just putting the sample and gasket on the bottom diamond anvil directly. The superconducting transition temperature of FeSe single crystal was enhanced up to 43 K by applying uniaxial-like pressure.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 43 | Pressure not reported | unknown |
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