Sub-micron Circuit Fabrication on Diamond Anvils for Mesoscopic High-Pressure Experiments
Z. R. Rehfuss, K. Zheng, S. L. Gould, K. W. Murch, S. Ran
arXiv:2501.03317 · 2025-01-06
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Abstract
We present a novel fabrication procedure to produce high-quality lift-off structures on diamond anvils extending from the culet down to the slanted facets. Feature sizes down to 500 nm are achieved through the use of a bi-layer resist stack and electron beam lithography. Device structures with strong adhesion to the diamond surface and high abrasion resistance are realized by optimizing the surface treatment. To benchmark our process, we fabricate a multi-lead tungsten circuit to measure changes of the superconducting transition temperature of zirconium across the structural phase transition at $\sim$30 GPa; showing a 4-fold jump of the critical temperature. Our process is easily reproducible in most traditional academic and industrial cleanroom facilities. This work paves the way for complex and high-precision fabrication and measurements inside diamond anvil cells and on other faceted crystalline samples.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Zr Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 4.3 | 20.2 GPa | unknown |
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