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Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Stefan Wilfert, Paolo Sessi, Zhiwei Wang, Henrik Schmidt, M. Carmen Martinez-Velarte, Seng Huat Lee, Yew San Hor, Alexander F. Otte, Yoichi Ando, Weida Wu, Matthias Bode

arXiv:1808.06501 · DOI 10.1103/PhysRevB.98.085133 · 2018-08-20 · Physical Review B

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Abstract

Recently the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, a definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy (STM) and spectroscopy (STS) experiments performed on Tl-doped Bi$_2$Te$_3$, a three-dimensional topological insulator which becomes superconducting in the bulk at $T_{\rm C} = 2.3$\,K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy $E_{\textrm{D}} = -(118 \pm 1)$\,meV and a Dirac velocity $v_{\textrm{D}} = (4.7 \pm 0.1)\cdot 10^{5}$\,m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both $T_{\rm C}$ and $μ_0 H_{\rm C}$ strongly deviate from the corresponding bulk values. Furthermore, in spite of acritical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is only caused by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi$_2$Se$_3$. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Tl0.6Bi2Te3

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2.3Pressure not reportedunknown
CuxBi2Se3

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3.8Pressure not reportedunknown
Cu0.25Bi2Se3

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3.3Pressure not reportedunknown
Cu0.3Bi2Se3

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3.2Pressure not reportedunknown
Cu0.3Bi2Se3

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3.4Pressure not reportedunknown
Cu0.3Bi2Se3

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3.2Pressure not reportedunknown
SrxBi2Se3

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2.57Pressure not reportedunknown
Sr0.1Bi2Se3

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2.9Pressure not reportedunknown
Sr0.2Bi2Se3

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5Pressure not reportedunknown
Tl0.6Bi2Te3

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2.28Pressure not reportedunknown
Nb0.25Bi2Se3

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3.6Pressure not reportedunknown
Nb0.25Bi2Se3

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3Pressure not reportedunknown

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