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Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results

Stefan Wilfert, Paolo Sessi, Zhiwei Wang, Henrik Schmidt, M. Carmen Martínez-Velarte, Seng Huat Lee, Yew San Hor, Alexander F. Otte, Yoichi Ando, Weida Wu, Matthias Bode

DOI 10.1103/PhysRevB.98.085133 · Physical Review B

T1

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Abstract

Recently, the doping of topological insulators has attracted significant interest as a potential route towards topological superconductivity. Because many experimental techniques lack sufficient surface sensitivity, however, definite proof of the coexistence of topological surface states and surface superconductivity is still outstanding. Here we report on highly surface sensitive scanning tunneling microscopy and spectroscopy experiments performed on Tl-doped Bi2Te3, a three-dimensional topological insulator which becomes superconducting in the bulk at TC=2.3 K. Landau level spectroscopy as well as quasiparticle interference mapping clearly demonstrated the presence of a topological surface state with a Dirac point energy ED=−(118±1) meV and a Dirac velocity vD=(4.7±0.1)×105 m/s. Tunneling spectra often show a superconducting gap, but temperature- and field-dependent measurements show that both TC and μ0HC strongly deviate from the corresponding bulk values. Furthermore, in spite of a critical field value which clearly points to type-II superconductivity, no Abrikosov lattice could be observed. Experiments performed on normal-metallic Ag(111) prove that the gapped spectrum is caused only by superconducting tips, probably caused by a gentle crash with the sample surface during approach. Nearly identical results were found for the intrinsically n-type compound Nb-doped Bi2Se3. Our results suggest that the superconductivity in superconducting-doped V-VI topological insulators does not extend to the surface where the topological surface state is located.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
Tl0.6Bi2Te3

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2.3Pressure not reportedunknown
CuxBi2Se3

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3.8Pressure not reportedunknown
SrxBi2Se3

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2.57Pressure not reportedunknown
SrxBi2Se3

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2.9Pressure not reportedunknown
Sr0.2Bi2Se3

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5Pressure not reportedunknown
TlxBi2Te3

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2.28Pressure not reportedunknown
NbxBi2Se3

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3.6Pressure not reportedunknown
NbxBi2Se3

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3Pressure not reportedunknown
TlxBi2Te3

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

2.3Pressure not reportedunknown

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