Improvement of the critical temperature of NbTiN films on III-nitride substrates

Houssaine Machhadani; Julien Zichi; Catherine Bougerol; Stéphane Lequien; Jean-Luc Thomassin; Nicolas Mollard; Anna Mukhtarova; Val Zwiller; Jean-Michel Gérard; Eva Monroy

doi:10.1088/1361-6668/aaf99d

Improvement of the critical temperature of NbTiN films on III-nitride substrates

Houssaine Machhadani, Julien Zichi, Catherine Bougerol, Stéphane Lequien, Jean-Luc Thomassin, Nicolas Mollard, Anna Mukhtarova, Val Zwiller, Jean-Michel Gérard, Eva Monroy

arXiv:1810.04070 · DOI 10.1088/1361-6668/aaf99d · 2018-10-09 · Superconductor Science and Technology

T1theoretical16 citations

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Abstract

In this paper, we study the impact of using III-nitride semiconductors (GaN, AlN) as substrates for ultrathin (11 nm) superconducting films of NbTiN deposited by reactive magnetron sputtering. The resulting NbTiN layers are (111)-oriented, fully relaxed, and they keep an epitaxial relation with the substrate. The higher critical superconducting temperature (Tc = 11.8 K) was obtained on AlN-on-sapphire, which was the substrate with smaller lattice mismatch with NbTiN. We attribute this improvement to a reduction of the NbTiN roughness, which appears associated to the relaxation of the lattice misfit with the substrate. On AlN-on-sapphire, superconducting nanowire single photon detectors (SNSPDs) were fabricated and tested, obtaining external quantum efficiencies that are in excellent agreement with theoretical calculations.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
NbTiN Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	11.8	Pressure not reported	unknown