Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer on NdGaO$_{3}$(110)

Haohao Yang; Guanyu Zhou; Yuying Zhu; Guan-Ming Gong; Qinghua Zhang; Menghan Liao; Zheng Li; Cui Ding; Fanqi Meng; Mohsin Rafique; Heng Wang; Lin Gu; Ding Zhang; Lili Wang; Qi-Kun Xue

doi:10.1016/j.scib.2019.03.017

Superconductivity above 28 K in single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer on NdGaO$_{3}$(110)

Haohao Yang, Guanyu Zhou, Yuying Zhu, Guan-Ming Gong, Qinghua Zhang, Menghan Liao, Zheng Li, Cui Ding, Fanqi Meng, Mohsin Rafique, Heng Wang, Lin Gu, Ding Zhang, Lili Wang, Qi-Kun Xue

arXiv:1901.06104 · DOI 10.1016/j.scib.2019.03.017 · 2019-01-18 · Science bulletin

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Abstract

We prepared single unit cell FeSe films on GaO$_{2-δ}$ terminated perovskite NdGaO$_{3}$(110) substrates and performed ex situ transport and scanning transmission electron microscopy measurements on the FeTe protected films. Our experimental measurements showed that the single unit cell FeSe films interfaced with GaO$_{2-δ}$ layer are electron doped via interface charge transfer. Most importantly, this type of heterostructure can host interface enhanced superconductivity with an onset temperature of about 28 K, which is much higher than the value of 8 K in bulk FeSe. Our work indicates that FeSe/GaO$_{2-δ}$can be a comparative platform with the FeSe/TiO$_{2-δ}$ family for understanding the mechanism of interface enhanced high temperature superconductivity.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	28	Pressure not reported	onset
FeSe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	8	Pressure not reported	unknown