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Unraveling Enhanced Superconductivity in Single-layer FeSe through Substrate Surface Terminations

Zou, Qiang, Kim, Gi-Yeop, Kang, Jong-Hoon, Oli, Basu Dev, Ge, Zhuozhi, Weinert, Michael, Mandal, Subhasish, Eom, Chang-Beom, Choi, Si-Young, Li, Lian

arXiv:2502.16784 · 2025-02-25

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Abstract

Single-layer FeSe films grown on (001) SrTiO3 substrates have shown a significant increase in superconducting transition temperature compared to bulk FeSe. Several mechanisms have been proposed to explain such enhancement, including electron doping, interfacial electron-phonon coupling, and strong electron correlations. To pinpoint the primary driver, we grew FeSe films on SrTiO3 substrates with coexisting TiO2 and SrO surface terminations. Scanning tunneling spectroscopy revealed a larger superconducting gap of 17 meV for FeSe on TiO2 compared to 11 meV on SrO. Tunneling spectroscopy also showed a larger work function on SrO, leading to reduced charge transfer, as confirmed by angle-resolved photoemission spectroscopy. Scanning transmission electron microscopy revealed distinctive interfacial atomic-scale structures, with the Se-Fe-Se tetrahedral angle changing from 109.9° on SrO to 105.1° on TiO2. Compared to dynamical mean field theory calculations, these results suggest optimal electron correlations in FeSe/TiO2 for enhancing high-temperature superconductivity.

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FormulaReported Tc (K)Pressure (GPa)Type
FeSe

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—Pressure not reportedunknown
FeSe

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

—Pressure not reportedunknown

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