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Room-temperature annealing effects on the basal-plane resistivity of optimally doped YBa$_2$Cu$_3$O$_{7-δ}$ single crystals

G. Ya. Khadzhai, R. V. Vovk, N. R. Vovk, S. N. Kamchatnaya, O. V. Dobrovolskiy

arXiv:1901.06171 · DOI 10.1016/j.physc.2017.11.015 · 2019-01-18 · Physica C-superconductivity and Its Applications

T1theoretical15 citations

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Abstract

We reveal that the temperature dependence of the basal-plane normal-state electrical resistance of optimally doped YBa$_2$Cu$_3$O$_{7-δ}$ single crystals can be with great accuracy approximated within the framework of the model of s-d electron-phonon scattering. This requires taking into account the fluctuation conductivity whose contribution exponentially increases with decreasing temperature and decreases with an increase of oxygen deficiency. Room-temperature annealing improves the sample and, thus, increases the superconducting transition temperature. The temperature of the 2D-3D crossover decreases during annealing.

Source-reported materials — not catalogue approval

FormulaReported Tc (K)Pressure (GPa)Type
YBa2Cu3O7-δ

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91.88Pressure not reportedunknown
YBa2Cu3O7-δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

91.95Pressure not reportedunknown
YBa2Cu3O7-δ

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Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.

92.01Pressure not reportedunknown

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