Improving the Josephson energy in High-T$_c$ superconducting junctions for ultra-fast electronics
H. Navarro, M. Sirena, N. Haberkorn
arXiv:1906.01596 · DOI 10.1088/1361-6528/ab59f7 · 2019-06-04
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Abstract
We report the electrical transport in vertical Josephson tunnel junctions (area 400 $μm$$^2$) using GdBa$_2$Cu$_3$O$_7$$_{-δ}$ electrodes and SrTiO$_3$ as an insulating barrier (with thicknesses between 1 nm and 4 nm). The results show Josephson coupling for junctions with SrTiO$_3$ barriers of 1 nm and 2 nm. The latter displays a Josephson of 8.9 mV at 12 K. This value is larger than the usually observed in planar arrays of junctions. Our results are promising for the development of superconducting electronic devices in the terahertz regime.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| GdBa2Cu3O7-δ Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | — | Pressure not reported | — |
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