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Non-Volatile Superconductivity in an Insulating Copper Oxide Induced via Ionic Liquid Gating

Xinjian Wei, Hao-bo Li, Qinghua Zhang, Dong Li, Mingyang Qin, Wei Hu, Ge He, Qing Huan, Li Yu, Qihong Chen, Jun Miao, Jie Yuan, Beiyi Zhu, A. Kusmartseva, F. V. Kusmartsev, Alejandro V. Silhanek, Tao Xiang, Weiqiang Yu, Yuan Lin, Lin Gu, Pu Yu, Kui Jin

arXiv:1906.07360 · 2019-06-18 · arXiv: Superconductivity

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Abstract

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a trial-and-error method that is difficult to implement and time consuming. Here, employing ionic liquid gating, a selective control of volatile and non-volatile superconductivity is achieved in pristine insulating Pr_2CuO_{4\pmδ} film, based on two distinct mechanisms: 1) with positive electric fields, the film can be reversibly switched between non-superconducting and superconducting states, attributed to the carrier doping effect. 2) The film becomes more resistive by applying negative bias voltage up to -4 V, but strikingly, a non-volatile superconductivity is achieved once the gate voltage is removed. Such a persistent superconducting state represents a novel phenomenon in copper oxides, resulting from the doping healing of oxygen vacancies in copper-oxygen planes as unraveled by high-resolution scanning transmission electron microscope and in-situ x-ray diffraction experiments. The effective manipulation and mastering of volatile/non-volatile superconductivity in the same parent cuprate opens the door to more functionalities for superconducting electronics, as well as supplies flexible samples for investigating the nature of quantum phase transitions in high-T_c superconductors.

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FormulaReported Tc (K)Pressure (GPa)Type
Pr2CuO4±δ

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—Pressure not reportedunknown

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