Mask-less Patterning of Gallium-irradiated Superconducting Silicon Using Focused Ion Beam
Ryo Matsumoto, Shintaro Adachi, El Hadi S. Sadki, Sayaka Yamamoto, Hiromi Tanaka, Hiroyuki Takeya, Yoshihiko Takano
arXiv:1908.09272 · DOI 10.1021/acsaelm.9b00781 · 2019-08-25 · arXiv: Applied Physics
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Abstract
A direct patterning technique of gallium-irradiated superconducting silicon has been established by focused gallium-ion beam without any mask-based lithography process. The electrical transport measurements for line and square shaped patterns of gallium-irradiated silicon were carried out under self-field and magnetic field up to 7 T. Sharp superconducting transitions were observed in both patterns at temperature of 7 K. The line pattern exhibited a signature of higher onset temperature above 10 K. A critical dose amount to obtain the superconducting gallium-irradiated silicon was investigated by the fabrication of various samples with different doses. This technique can be used as a simple fabrication method for superconducting device.
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