Large surface conductance and two-dimensional superconductivity in microstructured crystalline topological insulators
Yangmu Li, Jie Wu, Fernando Camino, G. D. Gu, Ivan Božović, John M. Tranquada
arXiv:1908.10427 · DOI 10.1063/1.5122789 · 2019-08-27
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Abstract
Controllable geometric manipulation via micromachining techniques provides a promising tool for enhancing useful topological electrical responses relevant to future applications such as quantum information science. Here we present microdevices fabricated with focused ion beam from indium-doped topological insulator Pb1-xSnxTe. With device thickness on the order of 1 μm and an extremely large bulk resistivity, we achieve an unprecedented enhancement of the surface contribution to about 30% of the total conductance near room temperature. The surface contribution increases as the temperature is reduced, becoming dominant below approximately 180 K, compared to 30 K in mm-thickness crystals. In addition to the enhanced surface contribution to normal-state transport, we observe the emergence of a two-dimensional superconductivity below 6 K. Measurements of magnetoresistivity at high magnetic fields reveal a weak antilocalization behavior in the normal-state magnetoconductance at low temperature and a variation in the power-law dependence of resistivity on temperature with field. These results demonstrate that interesting electrical response relevant to practical applications can be achieved by suitable engineering of single crystals.
Source-reported materials — not catalogue approval
| Formula | Reported Tc (K) | Pressure (GPa) | Type |
|---|---|---|---|
| Pb1-xSnxTe Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula. | 6 | Pressure not reported | onset |
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