Electrostatic control of phase slips in Ti Josephson nanotransistors

C. Puglia; G. De Simoni; F. Giazotto

doi:10.1103/PhysRevApplied.13.054026

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Electrostatic control of phase slips in Ti Josephson nanotransistors

C. Puglia, G. De Simoni, F. Giazotto

arXiv:1910.14000 · DOI 10.1103/PhysRevApplied.13.054026 · 2019-10-30 · Physical Review Applied

T1theoretical31 citations

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Abstract

The investigation of the switching current probability distribution of a Josephson junction is a conventional tool to gain information on the phase slips dynamics as a function of the temperature. Here we adopt this well-established technique to probe the impact of an external static electric field on the occurrence of phase slips in gated all-metallic titanium (Ti) Josephson weak links. We show, in a temperature range between 20 mK and 420 mK, that the evolution of the phase slips dynamics as a function of the electrostatic field starkly differs from that observed as a function of the temperature. This fact demonstrates, on the one hand, that the electric field suppression of the critical current is not simply related to a conventional thermal-like quasiparticle overheating in the weak-link region. On the other hand, our results may open the way to operate an electrostatic-driven manipulation of phase slips in metallic Josephson nanojunctions, which can be pivotal for the control of decoherence in superconducting nanostructures.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Ti Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	0.3	Pressure not reported	unknown