Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Shintaro Adachi; Ryo Matsumoto; Sayaka Yamamoto; Takafumi D. Yamamoto; Kensei Terashima; Yoshito Saito; Miren Esparza Echevarria; Pedro Baptista de Castro; Peng Song; Suguru Iwasaki; Hiroyuki Takeya; Yoshihiko Takano

doi:10.1063/5.0004973

Demonstration of Electric Double Layer Gating under High Pressure by the Development of Field-Effect Diamond Anvil Cell

Shintaro Adachi, Ryo Matsumoto, Sayaka Yamamoto, Takafumi D. Yamamoto, Kensei Terashima, Yoshito Saito, Miren Esparza Echevarria, Pedro Baptista de Castro, Peng Song, Suguru Iwasaki, Hiroyuki Takeya, Yoshihiko Takano

arXiv:2002.09835 · DOI 10.1063/5.0004973 · 2020-02-23 · Applied Physics Letters

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Abstract

We have developed an approach to control the carrier density in various material under high pressure by the combination of an electric double layer transistor (EDLT) with a diamond anvil cell (DAC). In this study, this EDLT-DAC was applied to a Bi thin film, and here we report the field-effect under high pressure in the material. Our EDLT-DAC is a promising device for exploring unknown physical phenomena such as high transition-temperature superconductivity (HTS).