Niobium Dayem nano-bridge Josephson field-effect transistors

Giorgio De Simoni; Claudio Puglia; Francesco Giazotto

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Niobium Dayem nano-bridge Josephson field-effect transistors

Giorgio De Simoni, Claudio Puglia, Francesco Giazotto

arXiv:2004.09182 · 2020-04-20

T2theoretical1 citations

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Abstract

We report on the first realization of Nb-based \textit{all-metallic} gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of $\sim 3$ K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable \emph{half-wave} rectifier to be used either for superconducting electronics or for photon detection applications.

Source-reported materials — not catalogue approval

Formula	Reported Tc (K)	Pressure (GPa)	Type
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	9.2	Pressure not reported	unknown
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	7.9	Pressure not reported	onset
Nb Archive — visibility unverified Source-occurrence policy only; no material identity or catalogue acceptance is inferred from the formula.	3.16	Pressure not reported	zero_resistance